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notes through are on page 9 applications ? battery operated dc motor inverter mosfet ? secondary side synchronous rectification mosfet features and benefits features benefits low r dson (<3.5m ) lower conduction losses low thermal resistance to pcb ( < 3 . 4 c / w ) enable better thermal dissipation low profile (<1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

!" form quantity IRLHM630trpbf pqfn 3.3mm x 3.3mm tape and reel 4000 IRLHM630tr2pbf pqfn 3.3mm x 3.3mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note hexfet # power mosfet pqfn 3.3mm x 3.3mm 32 1 8 7 6 5 4 d d d d s s s g absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bot tom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bot tom) = 100c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bott om) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 3017 40 -55 to + 150 2.7 0.022 37 v w a c max. 21 40 160 12 v ds 30 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 3.5 m r ds(on) max (@v gs = 2.5v) 4.5 m q g (typical) 41 nc i d (@t c(bottom) = 25c) 40 a downloaded from: http:///

!" d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 3.4 r jc (top) junction-to-case CCC 37 c/w r ja junction-to-ambient CCC 46 r ja (<10s) junction-to-ambient CCC 31 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 2.1 CCC mv/c CCC 2.2 3.2 CCC 2.5 3.5 CCC 3.5 4.5 v gs(th) gate threshold voltage 0.5 0.8 1.1 v ? v gs(th) gate threshold voltage coefficient CCC -3.8 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 140 CCC CCC s q g total gate charge CCC 41 62 v ds = 14v q gs gate-to-source charge CCC 4.6 CCC q gd gate-to-drain charge CCC 14 CCC r g gate resistance CCC 2.6 CCC t d(on) turn-on delay time CCC 9.1 CCC t r rise time CCC 32 CCC t d(off) turn-off delay time CCC 65 CCC t f fall time CCC 43 CCC c iss input capacitance CCC 3170 CCC c oss output capacitance CCC 330 CCC c rss reverse transfer capacitance CCC 250 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.2 v t rr reverse recovery time CCC 20 30 ns q rr reverse recovery charge CCC 30 45 nc m v dd = 15v, v gs = 4.5v v gs = 4.5v, i d = 20a CCC r g =1.0 v ds = 10v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c a i d = 20a (see fig.17 & 18) i d = 20a v gs = 0v v ds = 25v v ds = 24v, v gs = 0v t j = 25c, i f = 20a, v dd = 10v see fig.15 max. 8020 di/dt = 400a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. conditions ? = 1.0mhz CCC CCC 160 CCC CCC 40 typ. v gs = 12v v gs = -12v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 20a v ds = v gs , i d = 50 a v gs = 2.5v, i d = 20a r ds(on) static drain-to-source on-resistance mosfet symbol na ns a pf nc v gs = 4.5v CCC downloaded from: http:///

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!" fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 1.5 2.0 2.5 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.6v 1.5v bottom 1.3v 60 s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.6v 1.5v bottom 1.3v 60 s pulse width tj = 150c 1.3v downloaded from: http:///

!" fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 10ma 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc downloaded from: http:///

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!" fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 2 3 4 5 6 7 8 9 10 11 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 11a bottom 20a downloaded from: http:///

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for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s downloaded from: http:///

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!" pqfn 3.3x3.3 outline package details pqfn 3.3x3.3 outline part marking

http://www.irf.com/technical-info/appnotes/an-1154.pdf international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///

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!" pqfn 3.3x3.3 outline tape and reel camber not e: 1. dimension measured on the bottom of the cavity. 2. pitch t olerance over any 10 pitches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square inch 5. roll should contain splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform supplier specification) ps the camber shall not exceed i n 1mm/250 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///

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!" qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.40mh, r g = 50 , i as = 20a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 40a by production test capability. msl1 (per jedec j-std-02 0d ??? ) rohs compliant yes pqfn 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level industrial ?? (per jedec jesd47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? added rdson 10v at 20a, typical="2.2m " and max="3.2m " , on page 2. ? corrected rdson 4.5v at 20a, from typical="2.8m " to typical="2.5m " , on page 2. 5/29/2014 ? updated package 3d drawing, package outline and tape and reel, on page 1,7 and 8. ? updated ordering information to reflect the end-of-life (eol) of the mini-reel opt ion (eol notice #259) ? updated data sheet based on corporate template. revision history downloaded from: http:///

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